MMBT2222 Datasheet, PDF (1/2 Pages) Samsung semiconductor – NPN (GENERAL PURPOSE TRANSISTOR)

MMBT2222, MMBT2222A
Switching Transistors
NPN
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
Version 2004-05-04
Power dissipation – Verlustleistung
2.9 ^±0.1
1.1
0.4
3
Type
Code
1
2
1.9
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Dimensions / Maße in mm
1=B 2=E 3=C
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
NPN
250 mW
SOT-23
(TO-236)
0.01 g
Maximum ratings (T_A = 25°C)
Collector-Emitter-voltage
B open V_CE0
Collector-Base-voltage
E open V_CB0
Emitter-Base-voltage
C open V_EB0
Power dissipation – Verlustleistung
P_tot
Collector current – Kollektorstrom (dc)
I_C
Junction temp. – Sperrschichttemperatur
T_j
Storage temperature – Lagerungstemperatur
T_S
Grenzwerte (T_A = 25°C)
MMBT2222 MMBT2222A
30 V
40 V
60 V
75 V
5V
6V
250 mW ¹)
600 mA
150°C
- 65…+ 150°C
Characteristics (T_j = 25°C)
Collector-Base cutoff current – Kollektorreststrom
I_E = 0, V_CB = 50 V
I_E = 0, V_CB = 60 V
MMBT2222
I_CB0
MMBT2222A I_CB0
I_E = 0, V_CB = 50 V, T_j = 150°C MMBT2222
I_CB0
I_E = 0, V_CB = 60 V, T_j = 150°C MMBT2222A I_CB0
Emitter-Base cutoff current – Emitterreststrom
I_C = 0, V_EB = 3 V
MMBT2222A I_EB0
Collector saturation voltage – Kollektor-Sättigungsspannung ¹)
I_C = 150 mA, I_B = 15 mA
I_C = 500 mA, I_B = 50 mA
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
V_CEsat
V_CEsat
V_CEsat
V_CEsat
Kennwerte (T_j = 25°C)
Min.
Typ.
Max.
–
–
10 nA
–
–
10 nA
–
–
10 µA
–
–
10 µA
–
–
100 nA
–
–
400 mV
–
–
300 mV
–
–
1.6 V
–
–
1V
1_{) Mounted on P.C. board with 3 mm}2 _{copper pad at each terminal}
Montage auf Leiterplatte mit 3 mm² Kupferbelag (Lötpad) an jedem Anschluß
20