F11K120_15 Datasheet, PDF (2/2 Pages) Diotec Semiconductor – Rectifier with Overvoltage Protection

F11K120
Characteristics
Kennwerte
Hot leakage current – Heiß-Sperrstrom
Tj = 100°C VR = VWM
IR
ESD rating according to JESD22-A114 / contact discharge C = 100pF R = 1.5kΩ
ESD-Festigkeit gemäß JESD22-A114 / Kontaktentladung
< 100 µA
20 kV
Reverse recovery time
Sperrverzug
IF = 0.5 A through/über trr
IR = 1 A to IR = 0.25 A
< 350 ns
Thermal resistance junction to ambient air – Wärmewiderst. Sperrschicht – umg. Luft RthA < 25 K/W ¹)
Thermal resistance junction to leads – Wärmewiderst. Sperrschicht – Anschlussdraht RthL
< 10 K/W
120
[%]
100
80
60
40
20
I_FAV
0
0 T_C 50
100
150 [°C]
Rated forward current vs. temp. of the case
Zul. Richtstrom in Abh. v. d. Temp. Des Gehäuses
10³
[A]
10²
T_j = 125°C
10
T_j = 25°C
1
I_F
10^-1
250a-(7.5a-1,05v)
0.4 V_F 0.8 1.0 1.2 1.4 [V] 1.8
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
t_r = 10 µs
100
[%]
80
60
40
I_PP
20
P_PP
0
0
P_PPM/2
I_PPM/2
t_P
t1
2
3
10/1000µs - pulse waveform
10/1000µs - Impulsform
[ms] 4
t_r = 8 µs
100
[%]
80
60
40
I_PP
20
P_PP
0
0
P_PPM/2
I_PPM/2
t_P
t 20
40
8/20µs - pulse waveform
8/20µs - Impulsform
60 [µs]
1 Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlussdrähte in 10 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
2
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