DAF811A_11 Datasheet, PDF (2/2 Pages) Diotec Semiconductor – Rectifier Arrays

Characteristics
Forward voltage
Durchlass-Spannung
Leakage current
Sperrstrom
Reverse recovery time
Sperrverzug
Thermal resistance junction to case
Wärmewiderstand Sperrschicht – Gehäuse
DAF811A/K ... DAF814A/K (1.2 W)
Tj = 25°C IF = 1 A
VF
Kennwerte
< 1.3 V ¹)
Tj = 25°C VR = VRRM
IR
Tj = 100°C VR = VRRM
IR
IF = 10 mA through/über
trr
IR = 10 mA to IR = 1 mA
RthJC
< 10 µA
< 90 µA
< 350 ns
< 85 K/W ²)
120
[%]
100
80
60
40
20
I_FAV
0
0 T_A 50
100
150 [°C]
Rated forward current versus ambient temperature¹)
Zul. Richtstrom in Abh. von der Umgebungstemp.¹)
10²
[A]
10
T_j = 125°C
1
T_j = 25°C
10^-1
I_F
10^-2
30a-(1a-1.3v)
0.4 V_F 0.8 1.0 1.2 1.4 [V] 1.8
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
1 Per diode – Pro Diode
2 Valid, if leads are kept at ambient temperature at a distance of 3 mm from case
Gültig, wenn die Anschlussdrähte in 3 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2
http://www.diotec.com/
© Diotec Semiconductor AG