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| BY4_13 Datasheet, PDF (2/2 Pages) Diotec Semiconductor – High Voltage Silicon Rectifier Diodes | |||
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BY4 ... BY16
120
[%]
100
80
60
40
20
IFAV
0
0 TA 50
100
150 [°C]
Rated forward current versus ambient temperature1)
Zul. Richtstrom in Abh. von der Umgebungstemp.1)
102
[A]
10
BY4
[A]
BY6
1
BY8
BY12
BY16
10-1
IF
10-2
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
10
îF
BY4...BY6
BY8...BY12
BY16
1
1
10
102
[n] 103
Peak forward surge current versus number of cycles at 50 Hz
DurchlaÃ-Spitzenstrom in Abh. von der Zahl der Halbwellen bei 50 Hz
100
[µA]
10
1
IR
0.1
0
Tj 50
100 [°C] 150
Leakage current vs. junction temp. (typ. values)
Sperrstrom in Abh. v.d. Sperrschichttemp. (typ.)
2
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© Diotec Semiconductor AG
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