BFN23 Datasheet, PDF (2/2 Pages) Siemens Semiconductor Group – PNP Silicon High-Voltage Transistor (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)

High Voltage Transistors
Characteristics (T_j = 25/C)
Collector saturation volt. – Kollektor-Sättigungsspg. ¹)
- I_C = 10 mA, - I_B = 1 mA
- V_CEsat
Base saturation voltage – Basis-Sättigungsspannung ¹)
- I_C = 10 mA, - I_B = 1 mA
- V_BEsat
DC current gain – Kollektor-Basis-Stromverhältnis ¹)
- V_CE = 20 V, - I_C = 25 mA
h_FE
Gain-Bandwidth Product – Transitfrequenz
- V_CE = 10 V, - I_C = 10 mA, f = 20 MHz
f_T
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- V_CB = 30 V, I_E = i_e = 0, f = 1 MHz
C_CB0
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
BFN 23
Kennwerte (T_j = 25/C)
Min.
Typ.
Max.
–
–
500 mV
–
–
1V
50
–
–
–
100 MHz
–
–
0.8 pF
–
R_thA
420 K/W ²)
BFN 22
Marking - Stempelung
BFN 23 = HC
1_{) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%}
2_{) Mounted on P.C. board with 3 mm}2 _{copper pad at each terminal}
Montage auf Leiterplatte mit 3 mm² Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
13