BFN23 Datasheet, PDF (1/2 Pages) Siemens Semiconductor Group – PNP Silicon High-Voltage Transistor (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)

BFN 23
PNP
High Voltage Transistors
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
PNP
Dimensions / Maße in mm
1=B 2=E 3=C
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
250 mW
SOT-23
(TO-236)
0.01 g
Maximum ratings (T_A = 25/C)
Collector-Emitter-voltage
B open
Collector-Base-voltage
Collector-Emitter-voltage
Emitter-Base-voltage
E open
R_BE = 2.7 kS
C open
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Peak Collector current – Kollektor-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
- V_CE0
- V_CB0
- V_CER
- V_EB0
P_tot
- I_C
- I_CM
T_j
T_S
Grenzwerte (T_A = 25/C)
BFN 23
250 V
250 V
250 V
5V
250 mW ¹)
50 mA
100 mA
150/C
- 65…+ 150/C
Characteristics (T_j = 25/C)
Collector-Base cutoff current – Kollektorreststrom
I_E = 0, - V_CB = 200 V
I_E = 0, - V_CB = 200 V, T_j = 150/C
- I_CB0
- I_CB0
Collector-Base cutoff current – Kollektorreststrom
- V_CB = 250 V, R_BE = 2.7 kS
- V_CB = 250 V, R_BE = 2.7 kS, T_j = 150/C
- I_CBR
- I_CBR
Emitter-Base cutoff current – Emitterreststrom
I_C = 0, - V_EB = 5 V
- I_EB0
Kennwerte (T_j = 25/C)
Min.
Typ.
Max.
–
–
100 nA
–
–
20 :A
–
–
1 :A
–
–
50 :A
–
–
10 :A
1_{) Mounted on P.C. board with 3 mm}2 _{copper pad at each terminal}
Montage auf Leiterplatte mit 3 mm² Kupferbelag (Lötpad) an jedem Anschluß
12
01.11.2003