BCV26_15 Datasheet, PDF (2/2 Pages) NXP Semiconductors – PNP Darlington transistors

Characteristics (Tj = 25°C)
Collector-Base cutoff current – Kollektor-Basis-Reststrom
- VCB = 30 V, (E open)
Emitter-Base-cutoff current – Emitter-Basis-Reststrom
- VEB = 10 V, (C open)
Gain-Bandwidth Product – Transitfrequenz
- IC = 5 mA, - VCE = 30 V, f = 100 MHz
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
- ICBO
- IEBO
fT
RthA
BCV26
Kennwerte (Tj = 25°C)
–
–
100 nA
–
–-
100 nA
–
220 MHz
–
< 420 K/W ¹)
120
[%]
100
80
60
40
20
P_tot
0
0 T_A 50
100
150 [°C]
Power dissipation versus ambient temperature ¹)
Verlustleistung in Abh. von d. Umgebungstemp.¹)
1 Mounted on P.C. board with 3 mm² copper pad at each terminal
Montage auf Leiterplatte mit 3 mm² Kupferbelag (Lötpad) an jedem Anschluss
2
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