BCP54 Datasheet, PDF (2/2 Pages) NXP Semiconductors – NPN medium power transistors

General Purpose Transistors
BCP 54, BCP 55, BCP 56
Characteristics (T_j = 25/C)
DC current gain – Kollektor-Basis-Stromverhältnis ¹)
BCP 5x-6 h_FE
V_CE = 2 V, I_C = 150 mA
BCP 5x-10 h_FE
BCP 5x-16 h_FE
V_CE = 2 V, I_C = 5 mA
V_CE = 2 V, I_C = 500 mA
BCP 54... ^hFE
BCP56 _hFE
Base-Emitter voltage – Basis-Emitter-Spannung ¹)
V_CE = 2 V, I_C = 500 mA
Gain-Bandwidth Product – Transitfrequenz
V_BEon
V_CE = 5 V, I_C = 10 mA, f = 100 MHz
DC current gain ratio of the complement. pairs
Verhältnis der Stromverst. complement. Paare
f_T
' h_FE1 h_FE2
Thermal resistance – Wärmewiderstand
junction to ambient air – Sperrschicht zu umgebender Luft
junction to soldering point – Sperrschicht zu Lötpad
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
Kennwerte (T_j = 25/C)
Min.
Typ.
Max.
40
–
100
63
–
160
100
–
250
63
–
–
40
–
–
–
–
1V
– 130 MHz –
–
–
1.6
R_thA
95 K/W ²)
R_thS
14 K/W
BCP 51, BCP 52, BCP 53
1_{) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%}
2_{) Mounted on P.C. board with 3 mm}2 _{copper pad at each terminal}
Montage auf Leiterplatte mit 3 mm² Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
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