BCP54 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN medium power transistors

BCP 54, BCP 55, BCP 56
General Purpose Transistors
NPN
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
NPN
6.5^±0.2
3^±0.1
4
1.65
1 _0.7
2.3
2
3
3.25
Dimensions / Maße in mm
1 = B 2, 4 = C 3 = E
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
1.3 W
SOT-223
0.04 g
Maximum ratings (T_A = 25/C)
Collector-Emitter-voltage
B open V_CE0
Collector-Base-voltage
E open V_CB0
Emitter-Base-voltage
C open V_EB0
Power dissipation – Verlustleistung
P_tot
Collector current – Kollektorstrom (DC)
I_C
Peak Collector current – Koll.-Spitzenstrom
I_CM
Peak Base current – Basis-Spitzenstrom
I_BM
Junction temp. – Sperrschichttemperatur
T_j
Storage temperature – Lagerungstemperatur
T_S
Grenzwerte (T_A = 25/C)
BCP 54 BCP 55 BCP 56
45 V
60 V
80 V
45 V
60 V
100 V
5V
1.3 W ¹)
1A
1.5 A
200 mA
150/C
- 65…+ 150/C
Characteristics (T_j = 25/C)
Collector-Base cutoff current – Kollektorreststrom
I_E = 0, V_CB = 30 V
I_CB0
I_E = 0, V_CB = 30 V, T_j = 125/C
I_CB0
Emitter-Base cutoff current – Emitterreststrom
I_C = 0, V_EB = 5 V
I_EB0
Collector saturation volt. – Kollektor-Sättigungsspg. ²)
I_C = 500 mA, I_B = 50 mA
V_CEsat
Kennwerte (T_j = 25/C)
Min.
Typ.
Max.
–
–
100 nA
–
–
10 :A
–
–
100 nA
–
–
500 mV
1_{) Mounted on P.C. board with 3 mm}2 _{copper pad at each terminal}
Montage auf Leiterplatte mit 3 mm² Kupferbelag (Lötpad) an jedem Anschluß
2_{) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%}
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01.11.2003