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BCP51 Datasheet, PDF (2/2 Pages) NXP Semiconductors – PNP medium power transistors | |||
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General Purpose Transistors
BCP 51, BCP 52, BCP53
Characteristics (Tj = 25/C)
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
DC current gain â Kollektor-Basis-Stromverhältnis 1)
BCP 5x-6 hFE
- VCE = 2 V, - IC = 150 mA
BCP 5x-10 hFE
BCP 5x-16 hFE
- VCE = 2 V, - IC = 5 mA
- VCE = 2 V, - IC = 500 mA
BCP 51... hFE
BCP53 hFE
Base-Emitter voltage â Basis-Emitter-Spannung 1)
40
â
100
63
â
160
100
â
250
63
â
â
40
â
â
- VCE = 2 V, - IC = 500 mA
- VBEon
â
Gain-Bandwidth Product â Transitfrequenz
â
1V
- VCE = 5 V, - IC = 10 mA, f = 100 MHz
fT
Thermal resistance â Wärmewiderstand
â
115 MHz
â
junction to ambient air â Sperrschicht zu umgebender Luft
junction to soldering point â Sperrschicht zu Lötpad
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
RthA
95 K/W 2)
RthS
14 K/W
BCP 54, BCP 55, BCP 56
1) Tested with pulses tp = 300 :s, duty cycle # 2% â Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
2) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem AnschluÃ
01.11.2003
25
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