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BCP51 Datasheet, PDF (1/2 Pages) NXP Semiconductors – PNP medium power transistors | |||
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BCP 51, BCP 52, BCP 53
General Purpose Transistors
PNP
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
PNP
6.5±0.2
3±0.1
4
1.65
1 0.7
2.3
2
3
3.25
Dimensions / MaÃe in mm
1 = B 2, 4 = C 3 = E
Power dissipation â Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. â Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
1.3 W
SOT-223
0.04 g
Maximum ratings (TA = 25/C)
Collector-Emitter-voltage
B open
Collector-Base-voltage
E open
Emitter-Base-voltage
C open
Power dissipation â Verlustleistung
Collector current â Kollektorstrom (DC)
Peak Collector current â Koll.-Spitzenstrom
Peak Base current â Basis-Spitzenstrom
Junction temperature â Sperrschichttemperatur
Storage temperature â Lagerungstemperatur
- VCE0
- VCB0
- VEB0
Ptot
- IC
- ICM
- IBM
Tj
TS
Grenzwerte (TA = 25/C)
BCP 51 BCP 52 BCP 53
45 V
60 V
80 V
45 V
60 V
100 V
5V
1.3 W 1)
1A
1.5 A
200 mA
150/C
- 65â¦+ 150/C
Characteristics (Tj = 25/C)
Collector-Base cutoff current â Kollektorreststrom
IE = 0, - VCB = 30 V
IE = 0, - VCB = 30 V, Tj = 125/C
Emitter-Base cutoff current â Emitterreststrom
- ICB0
- ICB0
IC = 0, - VEB = 5 V
- IEB0
Collector saturation volt. â Kollektor-Sättigungsspg. 2)
- IC = 500 mA, - IB = 50 mA
- VCEsat
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
â
â
100 nA
â
â
10 :A
â
â
100 nA
â
â
500 mV
1) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem AnschluÃ
2) Tested with pulses tp = 300 :s, duty cycle # 2% â Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
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01.11.2003
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