BCP28 Datasheet, PDF (2/2 Pages) Siemens Semiconductor Group – PNP Silicon Darlington Transistors (For general AF applications High collector current High current gain)

Darlington Transistors
BCP 28, BCP 48
Characteristics (T_j = 25/C)
Kennwerte (T_j = 25/C)
Min.
Typ.
Max.
Collector saturation volt. – Kollektor-Sättigungsspg. ¹)
- I_C = 100 mA, - I_B = 0.1 mA
- V_CEsat
–
Base saturation voltage – Basis-Sättigungsspannung ¹)
–
1V
- I_C = 100 mA, - I_B = 0.1 mA
- V_BEsat
–
DC current gain – Kollektor-Basis-Stromverhältnis ¹)
–
1.5 V
- V_CE = 1 V, - I_C = 0.1 mA
BCP 28 h_FE
BCP 48 h_FE
4000
–
2000
–
–
–
- V_CE = 5 V, - I_C = 10 mA
BCP 28 h_FE
BCP 48 h_FE
10000
–
4000
–
–
–
- V_CE = 5 V, - I_C = 100 mA
BCP 28 h_FE
BCP 48 h_FE
20000
–
10000
–
–
–
- V_CE = 5 V, - I_C = 500 mA
BCP 28 h_FE
BCP 48 h_FE
4000
–
2000
–
–
–
Gain-Bandwidth Product – Transitfrequenz
- V_CE = 5 V, - I_C = 50 mA, f = 100 MHz
f_T
Collector-Base Capacitance – Kollektor-Basis-Kapazität
–
200 MHz
–
- V_CB = 10 V, I_E = i_e = 0, f = 1 MHz
C_CB0
–
8 pF
–
Thermal resistance – Wärmewiderstand
junction to ambient air – Sperrschicht zu umgebender Luft
junction to soldering point – Sperrschicht zu Lötpad
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
R_thA
93 K/W ²)
R_thS
17 K/W
BCP 29, BCP 49
Pinning – Anschlußbelegung
4=2
1
2
3
1_{) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%}
2_{) Mounted on P.C. board with 3 mm}2 _{copper pad at each terminal}
Montage auf Leiterplatte mit 3 mm² Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
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