BCP28 Datasheet, PDF (1/2 Pages) Siemens Semiconductor Group – PNP Silicon Darlington Transistors (For general AF applications High collector current High current gain)

BCP 28, BCP 48
Darlington Transistors
PNP
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
PNP
6.5^±0.2
3^±0.1
4
1.65
1 _0.7
2.3
2
3
3.25
Dimensions / Maße in mm
1 = B1 2, 4 = C 3 = E2
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
1.5 W
SOT-223
0.04 g
Maximum ratings (T_A = 25/C)
Collector-Emitter-voltage
B open
Collector-Base-voltage
E open
Emitter-Base-voltage
C open
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (DC)
Peak Collector current – Kollektor-Spitzenstrom
Base current – Basisstrom (DC)
Peak Base current – Basisstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
- V_CE0
- V_CB0
- V_EB0
P_tot
- I_C
- I_CM
- I_B
- I_BM
T_j
T_S
Grenzwerte (T_A = 25/C)
BCP 28
BCP 48
30 V
60 V
40 V
80 V
10 V
1.5 W ¹)
500 mA
800 mA
100 mA
200 mA
150/C
- 65…+ 150/C
Characteristics (T_j = 25/C)
Collector-Base cutoff current – Kollektorreststrom
I_E = 0, - V_CB = 30 V
BCP 28
I_E = 0, - V_CB = 60 V
I_E = 0, - V_CB = 30 V, T_A = 150/C
I_E = 0, - V_CB = 60 V, T_A = 150/C
BCP 48
BCP 28
BCP 48
Emitter-Base cutoff current – Emitterreststrom
- I_CB0
- I_CB0
- I_CB0
- I_CB0
I_C = 0, - V_EB = 4 V
- I_EB0
Kennwerte (T_j = 25/C)
Min.
Typ.
Max.
–
–
100 nA
–
–
100 nA
–
–
10 :A
–
–
10 :A
–
–
100 nA
1_{) Mounted on P.C. board with 3 mm}2 _{copper pad at each terminal}
Montage auf Leiterplatte mit 3 mm² Kupferbelag (Lötpad) an jedem Anschluß
2
01.11.2003