BC856S Datasheet, PDF (2/2 Pages) NXP Semiconductors – PNP general purpose double transistor

General Purpose Transistors
BC856S ... BC858S
Characteristics (T_j = 25/C)
Collector saturation volt. – Kollektor-Sättigungsspag. ¹)
- I_C = 10 mA, - I_B = 0.5 mA
- I_C = 100 mA, - I_B = 5 mA
-V_CEsat
-V_CEsat
Base saturation voltage – Basis-Sättigungsspannung ¹)
- I_C = 10 mA, - I_B = 0.5 mA
- I_C = 100 mA, - I_B = 5 mA
- V_BEsat
- V_BEsat
Base-Emitter voltage – Basis-Emitter-Spannung ¹)
- V_CE = 5 V, - I_C = 2 mA
- V_CE = 5 V, - I_C = 10 mA
- V_BEon
- V_BEon
Collector-Base cutoff current – Kollektorreststrom
I_E = 0, - V_CB = 30 V
I_E = 0, - V_CB = 30 V, T_j = 150/C
- I_CB0
- I_CB0
Emitter-Base cutoff current – Emitterreststrom
I_C = 0, - V_EB = 5 V
- I_EB0
Gain-Bandwidth Product – Transitfrequenz
- V_CE = 5 V, - I_C = 10 mA, f = 100 MHz
f_T
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- V_CB = 10 V, I_E = i_e = 0, f = 1 MHz
C_CB0
Noise figure – Rauschzahl
- V_CE = 5 V, - I_C = 200 :A
R_G = 2 kS, f = 1 kHz, )f = 200 Hz
F
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Min.
–
–
–
–
600 mV
–
–
–
–
100 MHz
–
–
R_thA
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
Pinning – Anschlußbelegung
654
Kennwerte (T_j = 25/C)
Typ.
Max.
90 mV 250 mV
200 mV 600 mV
700 mV
–
900 mV
–
650 mV 750 mV
–
820 mV
–
15 nA
–
5 :A
–
100 nA
–
–
–
6 pF
2 dB
10 dB
420 K/W ²)
BC846S ... BC848S
T1
T2
1
2
3
1_{) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%}
2_{) Mounted on P.C. board with 3 mm}2 _{copper pad at each terminal}
Montage auf Leiterplatte mit 3 mm² Kupferbelag (Lötpad) an jedem Anschluß
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