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BC856S Datasheet, PDF (1/2 Pages) NXP Semiconductors – PNP general purpose double transistor
BC856S ... BC858S
General Purpose Transistors
PNP
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
Version 2004-04-09
Dimensions / Maße in mm
Power dissipation – Verlustleistung
2±0.1
6.5 6.5
654
Type
Code
1
2
3
2.4
0.9±0.1
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
6 = C1 5 = B2 4 = E2
1 = E1 2 = B1 3 = C2
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
PNP
310 mW
SOT-363
0.01 g
Maximum ratings (TA = 25/C)
Collector-Emitter-voltage
B open
Collector-Base-voltage
E open
Emitter-Base-voltage
C open
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Peak Collector current – Kollektor-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Peak Emitter current – Emitter-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
- VCE0
- VCB0
- VEB0
Ptot
- IC
- ICM
- IBM
IEM
Tj
TS
Grenzwerte (TA = 25/C)
BC856S BC857S BC858S
65 V
45 V
30 V
80 V
50 V
30 V
5V
310 mW 1)
100 mA
200 mA
200 mA
200 mA
150/C
- 65…+ 150/C
Characteristics (Tj = 25/C)
DC current gain – Kollektor-Basis-Stromverhältnis 2)
- VCE = 5 V, - IC = 10 :A
hFE
- VCE = 5 V, - IC = 2 mA
hFE
h-Parameters at - VCE = 5V, - IC = 2 mA, f = 1 kHz
Small signal current gain
Kleinsignal-Stromverstärkung
hfe
Input impedance – Eingangs-Impedanz
hie
Output admittance – Ausgangs-Leitwert
hoe
Reverse voltage transfer ratio
Spannungsrückwirkung
hre
Kennwerte (Tj = 25/C)
typ. 90 ... 270
110 ... 800
typ. 220 ... 600
1.6 ... 15 kS
18 ... 110 :S
typ.1.5 ... 3 *10-4
1) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
2) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
18