BC337_07 Datasheet, PDF (2/2 Pages) Diotec Semiconductor – General Purpose Si-Epitaxial Planar Transistors

Characteristics (Tj = 25°C)
Base-Emitter-voltage – Basis-Emitter-Spannung ²)
VCE = 1 V, IC = 300 mA,
VBE
Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom
VCE = 45 V, (B-E short)
VCE = 25 V, (B-E short)
BC337
ICES
BC338
ICES
VCE = 45 V, Tj = 125°C, (B-E short)
VCE = 25 V, Tj = 125°C, (B-E short)
BC337
ICES
BC338
ICES
Gain-Bandwidth Product – Transitfrequenz
VCE = 5 V, IC = 10 mA, f = 50 MHz
fT
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE =ie = 0, f = 1 MHz
CCBO
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
Available current gain groups per type
Lieferbare Stromverstärkungsgruppen pro Typ
BC337 / BC338
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
–
–
1.2 V
–
2 nA 100 nA
–
2 nA 100 nA
–
–
10 µA
–
–
10 µA
–
100 MHz
–
–
12 pF
–
< 200 K/W ¹)
BC327 / BC328
BC337-16
BC337-25
BC337-40
BC338-16
BC338-25
BC338-40
120
[%]
100
80
60
40
20
P_tot
0
0 T_A 50
100
150 [°C]
Power dissipation versus ambient temperature ¹)
Verlustleistung in Abh. von d. Umgebungstemp.¹)
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2
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