BAW56_07 Datasheet, PDF (2/2 Pages) Diotec Semiconductor – Surface Mount Small Signal Double-Diodes

Characteristics (Tj = 25°C)
Max. junction capacitance – Max. Sperrschichtkapazität
VR = 0 V, f = 1 MHz
Reverse recovery time – Sperrverzug
IF = 10 mA über/through IR = 10 mA bis/to IR = 1 mA
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
BAW56
Kennwerte (Tj = 25°C)
CT
1.5 pF
trr
< 6 ns
RthA
< 400 K/W ¹)
Pinning – Anschlussbelegung
Marking – Stempelung
3
1
2
Double diode, common anode
Doppeldiode, gemeinsame Anode
1 = C1 2 = C2 3 = A1/A2
BAW56 = A1 or/oder JD
Other available configurations – Andere lieferbare Konfigurationen
Single diode – einzelne Diode
Double diode, series connection – Doppeldiode, Reihenschaltung
Double diode, common cathode – Doppeldiode, gemeinsame Kathode
BAL99
BAV99
BAV70
120
[%]
100
80
60
40
20
P_tot
0
0 T_A 50
100
150 [°C]
Power dissipation versus ambient temperature ¹)
Verlustleistung in Abh. von d. Umgebungstemp.¹)
1
[A]
10^-1
10^-2
T_j = 125°C
10^-3
T_j = 25°C
I_F
10^-4
0 V_F 0.4 0.6 0.8 1.0 [V] 1.4
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
1 Mounted on P.C. board with 3 mm² copper pad at each terminal
Montage auf Leiterplatte mit 3 mm² Kupferbelag (Lötpad) an jedem Anschluss
2
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