2N5400 Datasheet, PDF (2/2 Pages) Motorola, Inc – Amplifier Transistor(PNP Silicon)

2N5400 / 2N5401
Characteristics (Tj = 25°C)
Emitter-Base-cutoff current – Emitter-Basis-Reststrom
- VEB = 3 V, (C open)
- IEBO
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung ²)
- IC = 10 mA, - IB = 1 mA
- IC = 50 mA, - IB = 5 mA
Base-Emitter saturation voltage – Basis-Sättigungsspannung ²)
- VCEsat
- VCEsat
- IC = 10 mA, - IB = 1 mA
- IC = 50 mA, - IB = 5 mA
- VBEsat
- VBEsat
Gain-Bandwidth Product – Transitfrequenz
- VCE = 5 V, - IC = 10 mA, f = 50 MHz
fT
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE =ie = 0, f = 1 MHz
CCBO
Noise figure – Rauschzahl
- VCE = 5 V, - IC = 200 µA,
RS = 10 Ω, f = 1 kHz
2N5400 F
2N5401 F
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
–
–-
50 nA
–
–
0.2 V
–
–
0.5 V
–
–
1.0 V
–
–
1.0 V
100 MHz
–
400 MHz
–
–
6 pF
–
–
–
–
–
8 dB
< 200 K/W ¹)
2N5550 / 2N5551
120
[%]
100
80
60
40
20
P_tot
0
0 T_A 50
100
150 [°C]
Power dissipation versus ambient temperature ¹)
Verlustleistung in Abh. von d. Umgebungstemp.¹)
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2
http://www.diotec.com/
© Diotec Semiconductor AG