2N5400 Datasheet, PDF (1/2 Pages) Motorola, Inc – Amplifier Transistor(PNP Silicon)

2N5400 / 2N5401
2N5400 / 2N5401
PNP
General Purpose Si-Epitaxial Planar Transistors
Si-Epitaxial Planar-Transistoren für universellen Einsatz
Version 2006-06-17
Power dissipation
Verlustleistung
Plastic case
CBE
Kunststoffgehäuse
Weight approx. – Gewicht ca.
2 x 2.54
Dimensions - Maße [mm]
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
PNP
625 mW
TO-92
(10D3)
0.18 g
Maximum ratings (TA = 25°C)
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
Collector-Base-voltage – Kollektor-Basis-Spannung
Emitter-Base-voltage – Emitter-Basis-Spannung
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Peak Collector current – Kollektor-Spitzenstrom
Base current – Basisstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
B open
E open
C open
- VCE0
- VCBO
- VEBO
Ptot
- IC
- ICM
- IB
Tj
TS
Grenzwerte (TA = 25°C)
2N5400
2N5401
120 V
150 V
130 V
160 V
5V
625 mW ¹)
600 mA
1A
100 mA
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
DC current gain – Kollektor-Basis-Stromverhältnis ²)
- IC = 1 mA,
- IC = 10 mA,
- IC = 50 mA,
- VCE = 5 V
- VCE = 5 V
- VCE = 5 V
2N5400
- IC = 1 mA,
- IC = 10 mA,
- IC = 50 mA,
- VCE = 5 V
- VCE = 5 V
- VCE = 5 V
2N5401
Collector-Base cutoff current – Kollektor-Basis-Reststrom
- VCB = 100 V, (E open)
- VCB = 120 V, (E open)
2N5400
2N5401
- VCB = 100 V, Tj = 100°C, (E open)
- VCB = 120 V, Tj = 100°C, (E open)
2N5400
2N5401
hFE
hFE
hFE
hFE
hFE
hFE
- ICBO
- ICBO
- ICBO
- ICBO
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
30
–
–
40
–
180
40
–
–
50
–
–
60
–
240
50
–
–
–
–
100 nA
–
–
50 nA
–
–
100 µA
–
–
50 µA
1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
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