2N4402 Datasheet, PDF (2/2 Pages) ON Semiconductor – General Purpose Transistors(PNP Silicon)

General Purpose Transistors
2N4402, 2N4403
Characteristics (T_j = 25°C)
DC current gain – Kollektor-Basis-Stromverhältnis
- V_CE = 1 V, - I_C = 0.1 mA
- V_CE = 1 V, - I_C = 1 mA
- V_CE = 1 V, - I_C = 10 mA
- V_CE = 1 V, - I_C = 150 mA
- V_CE = 1 V, - I_C = 500 mA
2N4403 h_FE
2N4402 h_FE
2N4403 h_FE
2N4402 h_FE
2N4403 h_FE
2N4402 h_FE
2N4403 h_FE
2N4402 h_FE
2N4403 h_FE
h-Parameters at - V_CE = 10 V, - I_C = 1 mA, f = 1 kHz
Small signal current gain
2N4402 h_fe
Kleinsignal-Stromverstärkung 2N4403 h_fe
Input impedance
Eingangs-Impedanz
2N4402 h_ie
2N4403 h_ie
Output admittance – Ausgangs-Leitwert
h_oe
Reverse voltage ratio – Spannungsrückwirkg. h_re
Gain-Bandwidth Product – Transitfrequenz
- V_CE = 10 V, - I_C = 20 mA,
f = 100 MHz
2N4402 f_T
2N4403 f_T
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- V_CB = 10 V, - I_E = i_e = 0, f = 1 MHz
C_CB0
Emitter-Base Capacitance – Emitter-Basis-Kapazität
V_EB = 2 V, I_C = i_c = 0, f = 1 MHz
C_EB0
Switching times – Schaltzeiten
turn-on time
delay time
rise time
turn-off time
storage time
fall time
t_on
- I_Con = 150 mA
- I_Bon = 15 mA
I_Boff = 15 mA
t_d
t_r
t_off
t_s
t_f
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
Kennwerte (T_j = 25°C)
Min.
Typ.
Max.
30
–
–
30
–
–
60
–
–
50
–
–
100
–
–
50
–
150
100
–
300
20
–
–
20
–
–
30
–
60
–
0.75 kS
–
1.5 kS
–
1 µS
–
0.1 *10^-4
–
250
500
7.5 kS
15 kS
100 µS
8 *10^-4
150 MHz
–
–
200 MHz
–
–
–
–
8.5 pF
–
–
30 pF
–
–
35 ns
–
–
15 ns
–
–
20 ns
–
–
255 ns
–
–
225 ns
–
–
30 ns
R_thA
200 K/W ¹)
2N4400, 2N4401
1_{) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case}
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
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