2N4402 Datasheet, PDF (1/2 Pages) ON Semiconductor – General Purpose Transistors(PNP Silicon)

2N4402, 2N4403
PNP
Version 2004-01-20
Standard Pinning
1=C 2=B 3=E
General Purpose Transistors
Si-Epitaxial PlanarTransistors
PNP
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
625 mW
TO-92
(10D3)
0.18 g
Maximum ratings (T_A = 25°C)
Collector-Emitter-voltage
B open
Collector-Base-voltage
E open
Emitter-Base-voltage
C open
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Junction temp. – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
- V_CE0
- V_CE0
- V_EB0
P_tot
- I_C
T_j
T_S
Grenzwerte (T_A = 25°C)
2N4402, 2N4403
40 V
40 V
5V
625 mW ¹)
600 mA
150°C
- 55…+ 150°C
Characteristics (T_j = 25°C)
Collector saturation volt. – Kollektor-Sättigungsspannung
- I_C = 150 mA, - I_B = 15 mA
- I_C = 500 mA, - I_B = 50 mA
- V_CEsat
- V_CEsat
Base saturation voltage – Basis-Sättigungsspannung
- I_C = 150 mA, - I_B = 15 mA
- I_C = 500 mA, - I_B = 50 mA
- V_BEsat
- V_BEsat
Collector cutoff current – Kollektorreststrom
- V_CE = 35 V, - V_EB = 0.4 V
- I_CBV
Emitter cutoff current – Emitterreststrom
- V_CE = 35 V, - V_EB = 0.4 V
- I_EBV
Kennwerte (T_j = 25°C)
Min.
Typ.
Max.
–
–
400 mV
–
–
750 mV
750 mV
–
950 mV
–
–
1.3 V
–
–
100 nA
–
–
100 nA
1_{) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case}
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
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