2N3906 Datasheet, PDF (2/2 Pages) NXP Semiconductors – PNP switching transistor

2N3906
Characteristics (Tj = 25°C)
Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom
- VCE = 30 V, - VEB = 3 V
Emitter-Base cutoff current – Emitter-Basis-Reststrom
- VCE = 30 V, - VEB = 3 V
Gain-Bandwidth Product – Transitfrequenz
- IC = 10 mA, - VCE = 20 V, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 5 V, IE = ie = 0, f = 1 MHz
Emitter-Base Capacitance – Emitter-Basis-Kapazität
- VEB = 0.5 V, IC = ic = 0, f = 1 MHz
Noise figure – Rauschzahl
- VCE = 5 V, - IC = 100 µA, RG = 1 kΩ, f = 1 kHz
Switching times – Schaltzeiten (between 10% and 90% levels)
delay time
rise time
- VCC = 3 V, - VBE = 0.5 V
- IC = 10 mA, - IB1 = 1mA
storage time
fall time
- VCC = 3 V, - IC = 10 mA,
- IB1 = - IB2 = 1 mA
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
- ICBX
–
–
50 nA
- IEBV
–
–-
50 nA
fT 250 MHz
–
–
CCBO
–
–
4.5 pF
CEBO
–
–
10 pf
F
–
–
4 dB
td
–
tr
–
ts
–
tf
–
–
35 ns
–
35 ns
–
225 ns
–
75 ns
RthA
< 200 K/W ¹)
2N3904
1 Mounted on P.C. board with 3 mm² copper pad at each terminal
Montage auf Leiterplatte mit 3 mm² Kupferbelag (Lötpad) an jedem Anschluss
2
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