2N3906 Datasheet, PDF (1/2 Pages) NXP Semiconductors – PNP switching transistor

2N3906
2N3906
PNP
Si-Epitaxial-Planar Switching Transistors
Si-Epitaxial-Planar Schalttransistoren
Version 2006-09-12
Power dissipation
Verlustleistung
Plastic case
CBE
Kunststoffgehäuse
Weight approx. – Gewicht ca.
2 x 2.54
Dimensions - Maße [mm]
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
PNP
625 mW
TO-92
(10D3)
0.18 g
Maximum ratings (TA = 25°C)
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
Collector-Base-voltage – Kollektor-Basis-Spannung
Emitter-Base-voltage – Emitter-Basis-Spannung
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
B open
E open
C open
- VCEO
- VCBO
- VEBO
Ptot
- IC
Tj
TS
Grenzwerte (TA = 25°C)
2N3906
40 V
40 V
5V
625 mW ¹)
200 mA
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
DC current gain – Kollektor-Basis-Stromverhältnis ²)
- IC = 0.1 mA, - VCE = 1 V
hFE
- IC = 1 mA, - VCE = 1 V
hFE
- IC = 10 mA, - VCE = 1 V
hFE
- IC = 50 mA, - VCE = 1 V
hFE
- IC = 100 mA, - VCE = 1 V
hFE
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. ²)
- IC = 10 mA, - IB = 1 mA
- IC = 50 mA, - IB = 5 mA
- VCEsat
- VCEsat
Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung ²)
- IC = 10 mA, - IB = 1 mA
- IC = 50 mA, - IB = 5 mA
- VBEsat
- VBEsat
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
60
–
–
80
–
–
100
–
300
60
–
–
30
–
–
–
–
0.25 V
–
–
0.40 V
0.65 V
–
0.85 V
–
–
0.95 V
1 Mounted on P.C. board with 3 mm² copper pad at each terminal
Montage auf Leiterplatte mit 3 mm² Kupferbelag (Lötpad) an jedem Anschluss
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
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