1N1183_07 Datasheet, PDF (2/2 Pages) Microsemi Corporation – Silicon Power Rectifier

Characteristics
Forward Voltage – Durchlass-Spannung
Leakage Current – Sperrstrom
Thermal Resistance Junction – Case
Wärmewiderstand Sperrschicht – Gehäuse
Recommended mounting torque
Empfohlenes Anzugsdrehmoment
1N1183 ... 1N1190, 1N3766, 1N3768, PBY301 ... PB307
Tj = 25°C IF = 100 A
VF
Kennwerte
< 1.5 V
Tj = 25°C VR = VRRM
IR
< 500 µA
RthC
< 1 K/W
M6
26 ± 10% lb.in.
3 ± 10% Nm
120
[%]
100
80
60
40
20
I_FAV
0
0 T_C 50
100
150 [°C]
Rated forward current versus case temperature
Zul. Richtstrom in Abh. von der Gehäusetemp.
10³
[A]
10²
10
T_j = 125°C
T_j = 25°C
1
I_F
10^-1
450a-(100a-1,5v)
0.4 V_F 0.8 1.0 1.2 1.4 [V] 1.8
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
10³
[A]
10²
î_F
10
1
10
10²
[n] 10³
Peak forward surge current versus number of cycles at 50 Hz
Durchlaß-Spitzenstrom in Abh. von der Zahl der Halbwellen bei 50 Hz
2
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