1N1183_07 Datasheet, PDF (1/2 Pages) Microsemi Corporation – Silicon Power Rectifier

1N1183 ... 1N1190, 1N3766, 1N3768, PBY301 ... PB307
1N1183 ... 1N1190, 1N3766, 1N3768,
PBY301 ... PB307
Silicon-Power-Rectifiers
Silizium-Leistungs-Gleichrichter
Version 2007-05-09
Nominal Current
13.6
Nennstrom
35 A
Ø 4^+0.5
Repetitive peak reverse voltage
50 ... 1000 V
Periodische Spitzensperrspannung
Metal case
Metallgehäuse
Type
Weight approx.
Gewicht ca.
DO-5
6g
SW17
M6
Dimensions - Maße [mm]
Standard polarity: Cathode to stud / Kathode am Gewinde
Index R: Anode to stud / Anode am Gewinde (e. g. 1N1183R)
Standard packaging: bulk
Standard Lieferform: lose im Karton
Maximum ratings
Type
Typ
1N1183 = PBY301
1N1184 = PBY302
1N1186 = PBY303
1N1188 = PBY304
1N1190 = PBY305
1N3766 = PBY306
1N3768 = PBY307
Repetive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
50
100
200
400
600
800
1000
Grenzwerte
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
60
120
240
480
720
1000
1200
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
Repetitive peak forward current
Periodischer Spitzenstrom
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
TC = 100°C
IFAV
f > 15 Hz
IFRM
TA = 25°C
IFSM
TA = 25°C
i²t
Tj
TS
35 A
110 A ¹)
450/500 A
1000 A²s
-65...+175°C
-65...+175°C
1 Max. case temperature TC = 100°C – Max. Gehäusetemperatur TC = 100°C
© Diotec Semiconductor AG
http://www.diotec.com/
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