BC337 Datasheet, PDF (1/2 Pages) Motorola, Inc – Amplifier Transistor

BC 337 / BC 338
NPN
Standard Pinning
1=C 2=B 3=E
General Purpose Transistors
Si-Epitaxial PlanarTransistors
NPN
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
625 mW
TO-92
(10D3)
0.18 g
Maximum ratings (T_A = 25/C)
Collector-Emitter-voltage
B open V_CE0
Collector-Base-voltage
E open V_CB0
Emitter-Base-voltage
C open V_EB0
Power dissipation – Verlustleistung
P_tot
Collector current – Kollektorstrom (DC)
I_C
Junction temp. – Sperrschichttemperatur
T_j
Storage temperature – Lagerungstemperatur
T_S
Grenzwerte (T_A = 25/C)
BC 337
BC 338
45 V
25 V
50 V
30 V
5V
625 mW ¹)
800 mA
150/C
- 55…+ 150/C
Characteristics (T_j = 25/C)
DC current gain – Kollektor-Basis-Stromverhältnis
Group -16 h_FE
V_CE = 1 V, I_C = 100 mA
Group -25 h_FE
Group -40 h_FE
Collector-Emitter cutoff current – Kollektorreststrom
V_CE = 40 V
V_CE = 20 V
V_CE = 40 V, T_j = 125/C
V_CE = 20 V, T_j = 125/C
BC 337
I_CES
BC 338
I_CES
BC 337
I_CES
BC 338
I_CES
Kennwerte (T_j = 25/C)
Min.
Typ.
Max.
100
160
250
160
250
400
250
400
630
–
–
200 nA
–
–
200 nA
–
–
10 :A
–
–
10 :A
1_{) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case}
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
4
01.11.2003