2N5172 Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier

2N5172
2N5172
NPN
General Purpose Si-Epitaxial Planar Transistors
Si-Epitaxial Planar-Transistoren für universellen Einsatz
Version 2006-05-15
Power dissipation
Verlustleistung
Plastic case
E BC
Kunststoffgehäuse
Weight approx. – Gewicht ca.
2 x 2.54
Dimensions - Maße [mm]
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
NPN
625 mW
TO-92
(10D3)
0.18 g
Maximum ratings (TA = 25°C)
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
Collector-Base-volt. – Kollektor-Basis-Spannung
Emitter-Base-voltage – Emitter-Basis-Spannung
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
B open
E open
C open
VCEO
VCBO
VEBO
Ptot
IC
Tj
TS
Grenzwerte (TA = 25°C)
2N5172
25 V
25 V
5V
625 mW ¹)
100 mA
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
DC current gain – Kollektor-Basis-Stromverhältnis
VCE = 10 V, IC = 10 mA
Small-Signal current gain – Kleinsignal-Stromverstärkung
VCE = 10 V, IC = 1 mA, f = 1.0 kHz
Collector-Base cutoff current – Kollektor-Basis-Reststrom
VCB = 25 V (E open)
VCB = 25 V, Tj = 100°C (E open)
Collector-Emitter cutoff current – Kollektorreststrom
VCE = 25 V (B-E short)
Emitter-Base-cutoff current – Emitter-Basis-Reststrom
VEB = 5 V (C open)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
hFE
100
–
500
hfe
100
–
750
ICBO
–
ICBO
–
–
100 nA
–
10 µA
ICES
–
–
100 nA
IEBO
–
–
100 nA
1 Valid if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
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