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| ZXTDB2M832 Datasheet, PDF (6/8 Pages) Zetex Semiconductors – COMPLEMENTARY DUAL 20V LOW SATURATION TRANSISTOR | |||
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OBSOLETE - PLEASE USE ZXTC6718MC
ZXTDB2M832
PNP TRANSISTOR
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
Collector-Base Breakdown
Voltage
V(BR)CBO
Collector-Emitter Breakdown
Voltage
V(BR)CEO
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
V(BR)EBO
ICBO
IEBO
ICES
VCE(sat)
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
VBE(sat)
VBE(on)
hFE
Transition Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
fT
Cobo
t(on)
t(off)
MIN.
-25
-20
-7.5
300
300
150
15
150
TYP.
-35
MAX. UNIT
V
CONDITIONS.
IC=-100â®A
-25
V IC=-10mA*
-8.5
-19
-170
-190
-240
-225
-1.10
-0.87
475
450
230
30
180
21
40
670
-25
-25
-25
-30
-220
-250
-350
-300
-1.075
-0.95
30
V
nA
nA
nA
mV
mV
mV
mV
mV
V
V
MHz
pF
ns
ns
IE=-100â®A
VCB=-20V
VEB=-6V
VCE=-16V
IC=-0.1A, IB=-10mA*
IC=-1A, IB=-20mA*
IC=-1.5A, IB=-50mA*
IC=-2.5A, IB=-150mA*
IC=-3.5A, IB=-350mA*
IC=-3.5A, IB=-350mA*
IC=-3.5A, VCE=-2V*
IC=-10mA, VCE=-2V*
IC=-0.1A, VCE=-2V*
IC=-2A, VCE=-2V*
IC=-6A, VCE=-2V*
IC=-50mA, VCE=-10V
f=100MHz
VCB=-10V, f=1MHz
VCC=-10V, IC=-1A
IB1=IB2=10mA
*Measured under pulsed conditions.
ISSUE 2 - JUNE 2002
6
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