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| ZXTDB2M832 Datasheet, PDF (4/8 Pages) Zetex Semiconductors – COMPLEMENTARY DUAL 20V LOW SATURATION TRANSISTOR | |||
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OBSOLETE - PLEASE USE ZXTC6718MC
ZXTDB2M832
NPN TRANSISTOR
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
Collector-Base Breakdown
Voltage
V(BR)CBO
Collector-Emitter Breakdown
Voltage
V(BR)CEO
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
V(BR)EBO
ICBO
IEBO
ICES
VCE(sat)
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
VBE(sat)
VBE(on)
hFE
Transition Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
fT
Cobo
t(on)
t(off)
MIN.
40
20
7.5
200
300
200
100
100
TYP.
100
MAX. UNIT
V
CONDITIONS.
IC=100â®A
27
V IC=10mA*
8.2
8
90
115
190
210
0.98
0.88
400
450
360
180
140
23
170
400
25
25
25
15
150
135
250
270
1.05
0.95
30
V
nA
nA
nA
mV
mV
mV
mV
mV
V
V
MHz
pF
ns
ns
IE=100â®A
VCB=32V
VEB=6V
VCE=16V
IC=0.1A, IB=10mA*
IC=1A, IB=10mA*
IC=2A, IB=50mA
IC=3A, IB=100mA
IC=4.5A, IB=125mA
IC=4.5A, IB=125mA*
IC=4.5A, VCE=2V*
IC=10mA, VCE=2V*
IC=0.2A, VCE=2V*
IC=2A, VCE=2V*
IC=6A, VCE=2V*
IC=50mA, VCE=10V
f=100MHz
VCB=10V, f=1MHz
VCC=10V, IC=3A
IB1=IB2=10mA
*Measured under pulsed conditions.
ISSUE 2 - JUNE 2002
4
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