ZXTD4591AM832 Datasheet, PDF (6/10 Pages) Zetex Semiconductors – COMPLEMENTARY DUAL 40V HIGH PERFORMANCE TRANSISTOR

OBSOLETE - PLEASE USE ZXTC4591AMC
ZXTD4591AM832
PNP Transistor
Electrical characteristics (at T_amb = 25°C unless otherwise stated).
Parameter
Symbol Min.
Typ.
Max. Unit Conditions
Collector-Base
V_(BR)CBO
-40
breakdown voltage
V I_C = -100␮A
Collector-Emitter
V_(BR)CEO
-40
breakdown voltage
V _{IC = -10mA} ^(*)
Emitter-Base
V_(BR)EBO
-5
breakdown voltage
V I_E = -100␮A
Collector cut-off
current
I_CBO
-100
nA V_CB = -30V
Emitter cut-off current
Collector Emitter cut-
off current
Collector Emitter
saturation voltage
I_EBO
I_CES
V_CE(sat)
Base-Emitter
saturation voltage
V_BE(sat)
Base-Emitter turn-on
voltage
V_BE(on)
Static forward current h_FE
300
transfer ratio
300
250
160
30
Transition frequency f_T
150
-100
nA V_EB = -4V
-100
nV V_CE = -30V
-200
mV _{IC = -0.1A, IB = -1mA}^(*)
-350
mV _{IC = -0.5A, IB = -20mA}^(*)
-500
mV I_C = -1A, I_B = -100mA^(*)
-1.1
V _{IC = -1A, IB = -50mA}^(*)
-1.0
V _{IC = -1A, VCE = -5V}^(*)
I_C = -1mA, V_CE = -5V^(*)
800
I_C = -0.1A, V_CE = -5V^(*)
I_C = -0.5A, V_CE = -5V^(*)
I_C = -1A, V_CE = -5V^(*)
I_C = -2A, V_CE = -5V^(*)
MHz I_C = -50mA, V_CE = -10V
f = 100MHz
Output capacitance
C_OBO
10
pF V_CB = -10V, f = 1MHz
NOTES:
(*) Measured under pulsed conditions.
Issue 2 - April 2008
6
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