ZXTD4591AM832 Datasheet, PDF (4/10 Pages) Zetex Semiconductors – COMPLEMENTARY DUAL 40V HIGH PERFORMANCE TRANSISTOR

OBSOLETE - PLEASE USE ZXTC4591AMC
ZXTD4591AM832
NPN Transistor
Electrical characteristics (at T_amb = 25°C unless otherwise stated).
Parameter
Symbol Min.
Typ.
Max. Unit Conditions
Collector-Base
V_(BR)CBO
40
breakdown voltage
V I_C = 100␮A
Collector-Emitter
V_(BR)CEO
40
breakdown voltage
V _{IC = 10mA} ^(*)
Emitter-Base
V_(BR)EBO
5
breakdown voltage
V I_E = 100␮A
Collector cut-off
current
I_CBO
100
nA V_CB =30V
Emitter cut-off current
Collector Emitter cut-
off current
Collector Emitter
saturation voltage
I_EBO
I_CES
V_CE(sat)
Base-Emitter
saturation voltage
V_BE(sat)
Base-Emitter turn-on
voltage
V_BE(on)
Static forward current h_FE
300
transfer ratio
300
200
35
Transition frequency f_T
150
100
nA V_EB = 4V
100
nV V_CE = 30V
300
mV _{IC = 0.5A, IB = 50mA}^(*)
500
mV _{IC = 1A, IB = 100mA}^(*)
1.1
V _{IC = 1A, IB = 100mA}^(*)
1.0
V _{IC = 1A, VCE = 5V}^(*)
I_C = 1mA, V_CE = 5V^(*)
900
I_C = 0.5A, V_CE = 5V^(*)
I_C = 1A, V_CE = 5V^(*)
I_C = 2A, V_CE = 5V^(*)
MHz I_C = -50mA, V_CE = -10V
f = 100MHz
Output capacitance
C_OBO
10
pF V_CB = -10V, f = 1MHz
NOTES:
(*) Measured under pulsed conditions.
Issue 2 - April 2008
4
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