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| ZXTC6720MC_15 Datasheet, PDF (6/9 Pages) Diodes Incorporated – DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION | |||
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A Product Line of
Diodes Incorporated
ZXTC6720MC
PNP - Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 11)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Cutoff Current
Static Forward Current Transfer Ratio
(Note 11)
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
ICES
hFE
Min Typ
-70 -150
-70 -125
-7
-8.5
-
-
-
-
-
-
200 470
300 450
175 275
40
60
-
10
Collector-Emitter Saturation Voltage
(Note 11)
-
VCE(sat)
-
-
-
Base-Emitter Turn-On Voltage (Note 11)
Base-Emitter Saturation Voltage (Note 11)
Output Capacitance
VBE(on)
-
VBE(sat)
-
Cobo
-
Transition Frequency
fT
150
Turn-on Time
Turn-off Time
ton
-
toff
-
Notes: 11. Measured under pulsed conditions. Pulse width ⤠300µs. Duty cycle ⤠2%.
-35
-135
-140
-175
0.78
0.94
14
180
40
700
Max
-
-
-
-100
-100
-100
-
-
-
-
-
-50
-200
-220
-270
1.00
1.05
20
-
-
-
Unit
V
V
V
nA
ï nA
nA
-
mV
V
V
pF
MHz
ns
ns
Test Condition
IC = -100µA
IC = -10mA
IE = -100µA
VCB = -55V
VEB = -6V
VCE = -55V
IC = -10mA, VCE = -5V
IC = -100mA, VCE = -5V
IC = -1A, VCE = -5V
IC = -1.5A, VCE = -5V
IC = -3A, VCE = -5V
IC = -0.1A, IB = -10mA
IC = -0.5A, IB = -20mA
IC = -1.0A, IB = -100mA
IC = -1.5A, IB = -200mA
IC = -1.5A, VCE = -5V
IC = -1.5A, IB = -200mA
VCB = -10V. f = 1MHz
VCE = -10V, IC = -50mA,
f = 100MHz
VCC = -50V, IC = -1A
IB1 = IB2 = -50mA
ZXTC6720MC
Document number: DS31929 Rev. 3 - 2
6 of 9
www.diodes.com
January 2011
© Diodes Incorporated
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