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ZXTC6720MC_15 Datasheet, PDF (4/9 Pages) Diodes Incorporated – DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION
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Diodes Incorporated
ZXTC6720MC
Electrical Characteristics, NPN Transistor (at TA = 25°C unless otherwise specified)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 10)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Cutoff Current
Static Forward Current Transfer Ratio
(Note 10)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
ICES
hFE
Min Typ Max
Unit
100 180
-
V
80
110
-
V
7
8.2
-
V
-
-
100
nA
-
-
100
nA
-
-
100
nA
200 450
-
300 450 900
110 170
-
60
90
-
-
20
30
-
-
10
-
Collector-Emitter Saturation Voltage
(Note 10)
-
-
VCE(sat)
-
-
-
Base-Emitter Turn-On Voltage (Note 10)
Base-Emitter Saturation Voltage (Note 10)
Output Capacitance
VBE(on)
-
VBE(sat)
-
Cobo
-
Transition Frequency
fT
100
Turn-on Time
Turn-off Time
ton
-
toff
-
Notes: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
15
45
145
160
240
0.96
1.09
11.5
160
86
1128
20
60
185
200
340
1.05
1.175
18
-
-
-
mV
V
V
pF
MHz
ns
ns
Test Condition
IC = 100µA
IC = 10mA
IE = 100µA
VCB = 80V
VEB = 6V
VCE = 65V
IC = 10mA, VCE = 2V
IC = 200mA, VCE = 2V
IC = 1A, VCE = 2V
IC = 1.5A, VCE = 2V
IC = 3A, VCE = 2V
IC = 5A, VCE = 2V
IC = 0.1A, IB = 10mA
IC = 0.5A, IB = 50mA
IC = 1A, IB = 20mA
IC = 1.5A, IB = 50mA
IC = 3.5A, IB = 300mA
IC = 3.5A, VCE = 2V
IC = 3.5A, IB = 300mA
VCB = 10V. f = 1MHz
VCE = 10V, IC = 50mA,
f = 100MHz
VCC = 10V, IC = 1A
IB1 = IB2 = 25mA
ZXTC6720MC
Document number: DS31929 Rev. 3 - 2
4 of 9
www.diodes.com
January 2011
© Diodes Incorporated
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