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ZXTC6720MC Datasheet, PDF (6/9 Pages) Diodes Incorporated – DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION
◁
A Product Line of
Diodes Incorporated
ZXTC6720MC
Electrical Characteristics, PNP Transistor @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 4)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Cutoff Current
Static Forward Current Transfer Ratio
(Note 4)
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
ICES
hFE
Min Typ Max
Unit
-70 -150
-
V
-70 -125
-
V
-7.5 -8.5
-
V
-
-
-25
nA
-
-
-25
nA
-
-
-25
nA
300 470
-
300 450
-
175 275
-
-
40
60
-
-
10
-
Collector-Emitter Saturation Voltage
(Note 4)
Base-Emitter Turn-On Voltage (Note 4)
Base-Emitter Saturation Voltage (Note 4)
Output Capacitance
VCE(sat)
VBE(on)
VBE(sat)
Cobo
-
-35
-50
-
-
-135
-140
-200
-220
mV
-
-175 -260
-
0.78 1.00
V
-
0.94 1.05
V
-
14
20
pF
Transition Frequency
Turn-on Time
Turn-off Time
fT
150 180
-
MHz
ton
-
40
-
ns
toff
-
700
-
ns
Notes: 4. Measured under pulsed conditions.
Test Condition
IC = -100µA
IC = -10mA
IE = -100µA
VCB = -55V
VEB = -6V
VCE = -55V
IC = -10mA, VCE = -5V
IC = -100mA, VCE = -5V
IC = -1A, VCE = -5V
IC = -1.5A, VCE = -5V
IC = -3A, VCE = -5V
IC = -0.1A, IB = -10mA
IC = -0.5A, IB = -20mA
IC = -1.0A, IB = -100mA
IC = -1.5A, IB = -200mA
IC = -1.5A, VCE = -5V
IC = -1.5A, IB = -200mA
VCB = -10V. f = 1MHz
VCE = -10V, IC = -50mA,
f = 100MHz
VCC = -50V, IC = -1A
IB1 = IB2 = -50mA
ZXTC6719MC
Document number: DS31929 Rev. 2 - 2
6 of 9
www.diodes.com
January 2010
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