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ZXTC6720MC Datasheet, PDF (4/9 Pages) Diodes Incorporated – DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION
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Diodes Incorporated
ZXTC6720MC
Electrical Characteristics, NPN Transistor (at TA = 25°C unless otherwise specified)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 3)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Cutoff Current
Static Forward Current Transfer Ratio
(Note 3)
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
ICES
hFE
Min Typ Max
Unit
100 180
-
V
80
110
-
V
7.5
8.2
-
V
-
-
25
nA
-
-
25
nA
-
-
25
nA
200 450
-
300 450 900
110 170
-
60
90
-
-
20
30
-
-
10
-
Collector-Emitter Saturation Voltage
(Note 3)
Base-Emitter Turn-On Voltage (Note 3)
Base-Emitter Saturation Voltage (Note 3)
Output Capacitance
Transition Frequency
Turn-on Time
Turn-off Time
VCE(sat)
VBE(on)
VBE(sat)
Cobo
fT
ton
toff
-
15
20
-
45
60
-
145 185
mV
-
160 200
-
240 325
-
0.96 1.05
V
-
1.09 1.175
V
-
11.5
18
pF
100 160
-
MHz
-
86
-
ns
-
1128
-
ns
Notes: 3. Measured under pulsed conditions.
Test Condition
IC = 100µA
IC = 10mA
IE = 100µA
VCB = 80V
VEB = 6V
VCE = 65V
IC = 10mA, VCE = 2V
IC = 200mA, VCE = 2V
IC = 1A, VCE = 2V
IC = 1.5A, VCE = 2V
IC = 3A, VCE = 2V
IC = 5A, VCE = 2V
IC = 0.1A, IB = 10mA
IC = 0.5A, IB = 50mA
IC = 1A, IB = 20mA
IC = 1.5A, IB = 50mA
IC = 3.5A, IB = 300mA
IC = 3.5A, VCE = 2V
IC = 3.5A, IB = 300mA
VCB = 10V. f = 1MHz
VCE = 10V, IC = 50mA,
f = 100MHz
VCC = 10V, IC = 1A
IB1 = IB2 = 25mA
ZXTC6719MC
Document number: DS31929 Rev. 2 - 2
4 of 9
www.diodes.com
January 2010
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