DST847BPDP6_15 Datasheet, PDF (6/9 Pages) Diodes Incorporated – 45V COMPLEMENTARY SMALL SIGNAL TRANSISTOR IN SOT963

DST847BPDP6
Electrical Characteristics – Q2 PNP Transistor (@TA = +25°C, unless otherwise specified.)
Characteristic (Note 7)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Symbol
BVCBO
BVCES
BVCEO
BVEBO
ICBO
hFE
VCE(sat)
VBE(sat)
VBE(on)
Min
-50
-50
-45
-6
-
-
200
-
-
-
-
-600
-
Current Gain-Bandwidth Product
fT
100
Output Capacitance
Cobo
-
Note: 7. Measured under pulsed conditions. Pulse width  300µs. Duty cycle  2%.
Typical
-100
-90
-65
-8.5
-
340
330
-70
-300
-760
-885
-670
-715
340
2.0
Max
-
-
-
-
-15
-
470
-175
-500
-1,000
-1,100
-780
-850
-
-
Unit
V
V
V
V
nA
-
mV
mV
mV
MHz
pF
Test Condition
IC = -10µA, IB = 0
IC = -10µA, IB = 0
IC = -1mA, IB = 0
IE = -1µA, IC = 0
VCB = -30V
IC = -10µA, VCE = -5V
IC = -2.0mA, VCE = -5V
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
IC = -2.0mA, VCE = -5V
IC = -10mA, VCE = -5V
VCE = -5V, IC = -10mA,
f = 100MHz
VCB = -10V, f = 1.0MHz
DST847BPDP6
Document number: DS32036 Rev. 2 - 2
6 of 9
www.diodes.com
March 2015
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