DST847BPDP6_15 Datasheet, PDF (4/9 Pages) Diodes Incorporated – 45V COMPLEMENTARY SMALL SIGNAL TRANSISTOR IN SOT963

DST847BPDP6
Electrical Characteristics – Q1 NPN Transistor (@TA = +25°C, unless otherwise specified.)
Characteristic (Note 7)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Symbol
Min
BVCBO
50
BVCES
50
BVCEO
45
BVEBO
6
ICBO
-
hFE
-
200
VCE(sat)
-
-
VBE(sat)
-
-
VBE(on)
580
Current Gain-Bandwidth Product
fT
100
Collector-Base Capacitance
Ccbo
-
Note: 7. Measured under pulsed conditions. Pulse width  300µs. Duty cycle  2%.
Typical
150
150
65
8.35
-
220
300
50
122
760
880
650
725
175
1.5
Max
-
-
-
-
15
-
470
125
300
1,000
1,100
750
800
-
-
Unit
V
V
V
V
nA
-
mV
mV
mV
MHz
pF
Test Condition
IC = 10µA, IB = 0
IC = 10µA, IB = 0
IC = 1mA, IB = 0
IE = 1µA, IC = 0
VCB = 30V
IC = 10µA, VCE = 5V
IC = 2.0mA, VCE = 5V
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
IC = 2.0mA, VCE = 5V
IC = 10mA, VCE = 5V
VCE = 5V, IC = 10mA,
f = 100MHz
VCB = 10V, f = 1.0MHz
DST847BPDP6
Document number: DS32036 Rev. 2 - 2
4 of 9
www.diodes.com
March 2015
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