DSS60601MZ4_15 Datasheet, PDF (6/8 Pages) Diodes Incorporated – 60V NPN LOW SATURATION TRANSISTOR IN SOT223

1.2
I_C/I_B = 10
1.0
0.8
T_A = -55°C
0.6
T_A = 25°C
0.4 ^TA ^{= 85°C}
T_A = 150°C
0.2
0
1
1,000
10
100
1,000 10,000
I_C, COLLECTOR CURRENT (mA)
Fig. 7 Typical Base-Emitter Saturation Voltage
vs. Collector Current
100
1,000
100
DSS60601MZ4
f = 1MHz
C_ibo
C_obo
10
0.1
1
10
100
V_R, REVERSE VOLTAGE (V)
Fig. 8 Typical Capacitance Characteristics
10
V_CE = 10V
f = 100MHz
1
0 10 20 30 40 50 60 70 80 90 100
I_C, COLLECTOR CURRENT (mA)
Fig. 9 Typical Gain-Bandwidth Product
vs. Collector Current
DSS60601MZ4
Document number: DS31587 Rev. 3 - 2
6 of 8
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March 2014
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