DSS60601MZ4_15 Datasheet, PDF (2/8 Pages) Diodes Incorporated – 60V NPN LOW SATURATION TRANSISTOR IN SOT223

Absolute Maximum Ratings (@T_A = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
DSS60601MZ4
Value
Unit
100
V
60
V
6
V
6
A
12
A
Thermal Characteristics (@T_A = +25°C, unless otherwise specified.)
Power Dissipation
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Leads (Note 8)
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 7)
(Note 5)
(Note 6)
(Note 7)
Symbol
P_D
R_θJA
R_θJL
T_J, T_STG
Value
3
2
1.2
41.7
62.5
104
12.9
-55 to +150
Unit
W
C/W
C/W
C
ESD Ratings (Note 9)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
JEDEC Class
V
3A
V
C
Notes:
5. For a device mounted with the collector lead on 50mm x 50mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in steady-state.
6. Same as note (5), except the device is mounted on 25mm x 25mm 2oz copper.
7. Same as note (5), except the device is mounted on minimum recommended pad (MRP) layout.
8. Thermal resistance from junction to solder-point (at the end of the collector lead).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
DSS60601MZ4
Document number: DS31587 Rev. 3 - 2
2 of 8
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March 2014
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