ZXTN2010G_16 Datasheet, PDF (5/7 Pages) Diodes Incorporated – 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR

Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
ZXTN2010G
1
Tamb=25^OC
100m
10m
1m
I /I =50
CB
I /I =20
CB
I /I =10
CB
10m
100m
1
10
I Collector Current (A)
C_V
vI
CE(SAT) C
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1m
100^OC
25^OC
250
V =1V
CE
200
150
100
-55^OC
50
0
10m 100m
1
10
I Collector Current (A)
C
h vI
FE C
1.4
V =1V
CE
1.2
1.0
25^OC
0.8
-55^OC
0.6
0.4
1m
100^OC
10m
100m
1
10
I Collector Current (A)
C
V vI
BE(ON) C
0.6
I /I =10
0.5
CB
0.4
0.3
100^OC
0.2
25^OC
0.1
0.0
1m
-55^OC
10m
100m
1
10
I Collector Current (A)
C_V
vI
CE(SAT) C
1.6
I /I =10
CB
1.4
1.2
1.0
-55^OC
25^OC
0.8
0.6
0.4
1m
100^OC
10m
100m
1
10
I Collector Current (A)
C
V
vI
BE(SAT) C
ZXTP2010G
Document number: DS33660 Rev. 3 - 2
5 of 7
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December 2015
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