ZXTN2010G_16 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR

ZXTN2010G
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage (Note 9)
Base-Emitter Saturation Voltage (Note 9)
Base-Emitter Turn-on Voltage (Note 9)
DC Current Gain (Note 9)
Symbol Min
BVCBO 150
BVCER 150
BVCEO
60
BVEBO
7
ICBO
—
—
ICER
—
R≤1kΩ
—
IEBO
—
—
—
VCE(sat)
—
—
—
VBE(sat)
—
VBE(on)
—
100
hFE
100
55
20
Typ
190
190
80
8.1
—
—
—
—
—
20
45
50
100
210
1
0.94
200
200
105
40
Transition Frequency
fT
—
130
Output Capacitance (Note 9)
Switching Times
Cobo
—
31
tON
—
42
tOFF
—
760
Note:
9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
Max
—
—
—
—
50
0.5
100
0.5
10
30
60
70
135
260
1.1
1.05
—
300
—
—
—
—
—
—
Unit
V
V
V
V
nA
µA
nA
µA
nA
mV
V
V
MHz
pF
ns
Test Condition
IC = 100µA
IC = 1µA, RB ≤ 1kΩ
IC = 10mA
IE = 100µA
VCB = 120V
VCB = 120V, TA = +100°C
VCB = 120V
VCB = 120V, TA = +100°C
VEB = 6V
IC = 0.1A, IB = 5mA
IC = 1A, IB = 100mA
IC = 1A, IB = 50mA
IC = 2A, IB = 50mA
IC = 6A, IB = 300mA
IC = 6A, IB = 300mA
IC = 6A, VCE = 1V
IC = 10mA, VCE = 1V
IC = 2A, VCE = 1V
IC = 5A, VCE = 1V
IC = 10A, VCE = 1V
VCE = 10V, IC = 100mA,
f = 50MHz
VCB = 10V, f = 1MHz
VCC = 10V, IC = 1A,
IB1 = -IB2 = 100mA
ZXTP2010G
Document number: DS33660 Rev. 3 - 2
4 of 7
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December 2015
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