ZXTD4591E6_16 Datasheet, PDF (5/8 Pages) Diodes Incorporated – COMPLEMENTARY 60V NPN/PNP MEDIUM POWER TRANSISTORS

ZXTD4591E6
PNP - Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 10)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 10)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain Bandwidth Product
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
ICES
hFE
VCE(sat)
VBE(sat)
VBE(on)
Cobo
fT
Min Typ Max
-80


-60


-7



 -100

 -100

 -100
100  
100  300
80
 
15




-0.3
-0.6

 -1.2

 -1.0


10
150 

Note: 10. Measured under pulsed conditions. Pulse width  300µs. Duty cycle  2%.
Unit
Test Condition
V I_C = -100µA, I_E = 0
V I_C = -10mA, I_B = 0
V I_E = -100µA, I_C = 0
nA V_CB = -60V
nA V_EB = -5.6V
nA V_CE = -60V
IC = -1mA, VCE = -5V

IC = -500mA, VCE = -5V
IC = -1A, VCE = -5V
IC = -2A, VCE = -5V
V IC = -500mA, IB = -50mA
V _{IC = -1A, IB = -100mA}
V I_C = -1A, I_B = -100mA
V I_C = -1A, V_CE = -5V
pF
MHz
VCB = -10V, f = 1.0MHz
IC = -50mA, VCE = -10V
f = 100MHz
ZXTD4591E6
Document Number: DS33652 Rev: 2 - 2
5 of 8
www.diodes.com
November 2015
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