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ZXTD4591E6_16 Datasheet, PDF (3/8 Pages) Diodes Incorporated – COMPLEMENTARY 60V NPN/PNP MEDIUM POWER TRANSISTORS | |||
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NPN - Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 10)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 10)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain Bandwidth Product
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
ICES
hFE
VCE(sat)
VBE(sat)
VBE(on)
Cobo
fT
Min Typ Max
80
ï¾
ï¾
60
ï¾
ï¾
7
ï¾
ï¾
ï¾
ï¾ 100
ï¾
ï¾ 100
ï¾
ï¾ 100
100 ï¾ï ï¾ï
100 ï¾ï 300
80
ï¾ï ï¾ï
30
ï¾
ï¾ï
ï¾
ï¾
0.25
0.5
ï¾
ï¾ 1.1
ï¾ï
ï¾
1.0
ï¾
ï¾
10
180ï ï¾ï ï¾
Note: 10. Measured under pulsed conditions. Pulse width ï£ 300µs. Duty cycle ï£ 2%.
ZXTD4591E6
Unit
Test Condition
V IC = 100µA, IE = 0
V IC = 10mA, IB = 0
V IE = 100µA, IC = 0
nA VCB = 60V
nA VEB =5.6
nA VCE = 60V
IC = 1mA, VCE = 5V
ï¾
IC = 500mA, VCE = 5V
IC = 1A, VCE = 5V
IC = 2A, VCE = 5V
V IC = 500mA, IB = 50mA
V IC = 1A, IB = 100mA
V IC = 1A, IB = 100mA
V IC = 1, VCE = 5V
pF
MHz
VCB = 10V, f = 1.0MHz
IC = 50mA, VCE = 10V
f = 100MHz
ZXTD4591E6
Document Number: DS33652 Rev: 2 - 2
3 of 8
www.diodes.com
November 2015
© Diodes Incorporated
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