ZXTD4591E6_15 Datasheet, PDF (5/7 Pages) Diodes Incorporated – DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS

NPN TYPICAL CHARACTERISTICS
ZXTD4591E6
0.6
+25 ° C
0.5
0.4
IC/IB=10
IC/IB=50
0.3
0.2
0.1
0
1mA
10mA
100mA
1A
10A
IC-Collector Current
VCE(sat) v IC
300
VCE=5V
240 ^{+100 ° C}
180
+25 ° C
120
-55 ° C
60
0
1mA
10mA
100mA
1A
10A
IC-Collector Current
hFE V IC
VCE=5V
1.2
1.0
0.8
0.6
0.4
-55 ° C
+25 ° C
+100 ° C
0.2
0
1mA
10mA
100mA
1A
10A
IC-Collector Current
VBE(on) v IC
0.6
IC/IB=10
0.5
0.4
-55 ° C
+25 ° C
+100 ° C
0.3
0.2
0.1
0
1mA
10mA
100mA
1A
10A
IC-Collector Current
VCE(sat) v IC
1.4
IC/IB=10
1.2
1.0
0.8
0.6
-55 °C
+25 ° C
0.4
+100 ° C
0.2
0
1mA
10mA
100mA
1A
10A
IC-Collector Current
VBE(sat) v IC
10
1
0.1
0.01
DC
1s
100ms
10ms
1ms
100µs
0.001
0.1
1
10
100
VCE - Collector Emitter Voltage (V)
Safe Operating Area
ISSUE 1 - JULY 2000
5