 English |
|
|
|
|
|
|
|
| ZXTD4591E6_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS | |||
| |||
| ◁ |
ZXTD4591E6
NPN
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO 80
V
IC=100â®A
Collector-Emitter Breakdown
Voltage
V(BR)CEO 60
V
IC=10mA*
Emitter-Base Breakdown Voltage V(BR)EBO 5
Collector Cut-Off Current
ICBO
Emitter Cut-Off Current
IEBO
Collector Emitter Cut-Off Current ICES
Collector-Emitter Saturation
Voltage
VCE(sat)
Base-Emitter Saturation Voltage VBE(sat)
Base-Emitter Turn-On Voltage
VBE(on)
Static Forward Current Transfer hFE
100
Ratio
100
80
30
Transition Frequency
fT
150
100
100
100
0.25
0.5
1.1
1.0
300
V
nA
nA
nA
V
V
V
V
MHz
IE=100â®A
VCB=60V
VEB=4V
VCES=60V
IC=500mA, IB=50mA*
IC=1A, IB=100mA*
IC=1A, IB=100mA*
IC=1A, VCE=5V*
IC=1mA, VCE=5V*
IC=500mA, VCE=5V*
IC=1A, VCE=5V*
IC=2A, VCE=5V*
IC=50mA, VCE=10V
f=100MHz
Output Capacitance
Cobo
10
pF
VCB=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
ISSUE 1 - JULY 2000
4
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese