ZXTC2062E6_15 Datasheet, PDF (5/9 Pages) Diodes Incorporated – 20V COMPLEMENTARY MEDIUM POWER TRANSISTORS IN SOT26

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Diodes Incorporated
ZXTC2062E6
Electrical Characteristics – Q2 (PNP Transistor) (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 13)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS (Note 13)
DC Current Gain
Symbol Min
BVCBO
-25
BVCEO
-20
BVEBO
-7

ICBO

IEBO

300
hFE
170
65

Collector-Emitter Saturation Voltage

VCE(sat)


Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Delay Time
Rise Time
Storage Time
Fall Time
VBE(sat)

VBE(on)

Cobo

fT

td

tr

ts

tf

Note: 13. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
Typ
-55
-45
-8.3
< -1
< -1
450
300
100
15
-55
-100
-185
-190
-925
-835
21
290
56
68
158
59
Max



-50
-0.5
-50
900



-65
-135
-280
-250
-1,000
-900
30





Unit
Test Condition
V I_C = -100µA, I_E = 0
V I_C = -10mA, I_B = 0
V I_E = -100µA, I_C = 0
nA VCB = -25V
µA _{VCB = -25V, TA = +100°C}
nA V_EB = -5.6V
IC = -10mA, VCE = -2V
 ^{IC = -1.0A, VCE = -2V}
IC = -3.5A, VCE = -2V
IC = -10A, VCE = -2V
IC = -1.0A, IB = -100mA
mV ^{IC = -1.0A, IB = -20mA}
IC = -2.0A, IB = -40mA
IC = -3.5A, IB = -175mA
mV I_C = -3.5A, I_B = -175mA
mV I_C = -3.5A, V_CE = -2V
pF
MHz
ns
ns
ns
ns
VCB = -10V, f = 1.0MHz
VCE = -10V, IC = -50mA, f = 100MHz
VCC = -10V, IC = -1A,
IB1 = -IB2 = -10mA
ZXTC2062E6
Document Number: DS33647 Rev. 3 - 2
5 of 9
www.diodes.com
March 2015
© Diodes Incorporated