ZXTC2062E6_15 Datasheet, PDF (4/9 Pages) Diodes Incorporated – 20V COMPLEMENTARY MEDIUM POWER TRANSISTORS IN SOT26

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Diodes Incorporated
ZXTC2062E6
Electrical Characteristics – Q1 (NPN Transistor) (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 13)
Emitter-Base Breakdown Voltage
Emitter-Collector breakdown voltage (base open)
Collector Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS (Note 13)
DC Current Gain
Symbol
BVCBO
BVCEO
BVEBO
BVECO
ICBO
IEBO
hFE
Min Typ Max
100 140 
20
35

7
8.3 
5
6


<1
50
0.5

<1
50
300 450 900
280 420 
140 210 

15

Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Delay Time
Rise Time
Storage Time
Fall Time
VCE(sat)
VBE(sat)
VBE(on)
Cobo
fT
td
tr
ts
tf
40
50

60
75
95 115
140 190
 940 1,050
 810 900

17
25
 215 

68


72

 361 

64

Notes: 13. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
Unit
Test Condition
V I_C = 100µA, I_E = 0
V I_C = 10mA, I_B = 0
V I_E = 100µA, I_C = 0
V I_E = 100µA
nA VCB = 100V
µA _{VCB = 100V, TA = +100°C}
nA V_EB = 5.6V
IC = 10mA, VCE = 2V
 ^{IC = 1A, VCE = 2V}
IC = 4A, VCE = 2V
IC = 15A, VCE = 2V
IC = 1.0A, IB = 100mA
mV ^{IC = 1.0A, IB = 20mA}
IC = 2.0A, IB = 40mA
IC = 4A, IB = 200mA
mV I_C = 4A, I_B = 200mA
mV I_C = 4A, V_CE = 2V
pF
MHz
ns
ns
ns
ns
VCB = 10V, f = 1.0MHz
VCE = 10V, IC = 50mA, f = 100MHz
VCC = 10V, IC = 1A, IB1 = -IB2 = 10mA
ZXTC2062E6
Document Number: DS33647 Rev. 3 - 2
4 of 9
www.diodes.com
March 2015
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