ZXMP4A57E6_15 Datasheet, PDF (5/8 Pages) Diodes Incorporated – 40V P-CHANNEL ENHANCEMENT MODE MOSFET

Typical Characteristics
ZXMP4A57E6
T = 25°C
10
1
10V
5V
4.5V
4V
3.5V
3V
0.1
2.5V
-V
GS
0.01
0.1
1
10
-V Drain-Source Voltage (V)
DS
Output Characteristics
10
T = 150°C
1
T = 25°C
V = -10V
DS
0.1
2
3
4
-V Gate-Source Voltage (V)
GS
Typical Transfer Characteristics
100
2.5V
10
1
-V
GS
3V
3.5V
4V
4.5V
5V
0.1
7V
T = 25°C
10V
0.01
0.01
0.1
1
10
-I Drain Current (A)
On-Resist^Dance v Drain Current
T = 150°C
10
1
10V
5V
4.5V
4V
3.5V
3V
2.5V
0.1
2V
-V
GS
0.01
0.1
1
10
-V Drain-Source Voltage (V)
DS
Output Characteristics
1.6
V = -10V
GS
1.4
I = - 4A
D
R
DS(on)
1.2
1.0
0.8
0.6
-50
V =V
GS
DS
I = -250uA
D
V
GS(th)
0
50
100
150
Tj Junction Temperature (°C)
Normalised Curves v Temperature
10
1
T = 150°C
0.1
T = 25°C
0.01
1E-3
V = 0V
GS
1E-4
0.2 0.4 0.6 0.8 1.0 1.2
-V Source-Drain Voltage (V)
SD
Source-Drain Diode Forward Voltage
ZXMP4A57E6
Document Number DS35238 Rev. 3 - 2
5 of 8
www.diodes.com
February 2015
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