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ZXMP4A57E6_15 Datasheet, PDF (3/8 Pages) Diodes Incorporated – 40V P-CHANNEL ENHANCEMENT MODE MOSFET
Thermal Characteristics
ZXMP4A57E6
R
DS(ON)
10 Limited
1
DC
1s
100m
100ms
10ms
1ms
10m
Single Pulse, T =25°C
amb
100us
1
10
-V Drain-Source Voltage (V)
DS
P-channel Safe Operating Area
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
25 50 75 100 125 150
Temperature (°C)
Derating Curve
100
80
D=0.5
60
40
D=0.2
20
Single Pulse
D=0.05
D=0.1
0
100µ 1m 10m 100m 1
10 100 1k
Pulse Width (s)
Transient Thermal Impedance
100
Single Pulse
T =25°C
amb
10
1
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Pulse Power Dissipation
ZXMP4A57E6
Document Number DS35238 Rev. 3 - 2
3 of 8
www.diodes.com
February 2015
© Diodes Incorporated