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| MMDT4413_15 Datasheet, PDF (5/8 Pages) SeCoS Halbleitertechnologie GmbH – Plastic-Encapsulated Transistors | |||
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MMDT4413
Electrical Characteristics, PNP 4403 Section (@TA = +25°C unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 6)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Symbol
BVCBO
BVCEO
BVEBO
ICEX
IBL
hFE
VCE(SAT)
VBE(SAT)
Ccb
Ceb
hie
hre
hfe
hoe
fT
td
tr
ts
tf
Min
-40
-40
-5.0
ï¾
ï¾
30
60
100
100
20
ï¾
-0.75
ï¾
ï¾
ï¾
1.5
0.1
60
1.0
200
ï¾
ï¾
ï¾
ï¾
Max
ï¾
ï¾
ï¾
-100
-100
ï¾
ï¾
ï¾
300ï
ï¾
-0.40
-0.75
-0.95
-1.30
8.5
30
15
8.0
500
100
ï¾
15
20
225
30
Unit
V
V
V
nA
nA
ï¾
V
V
pF
pF
kï
x 10-4
ï¾
ïS
MHz
ns
ns
ns
ns
Test Condition
IC = -100µA, IE = 0
IC = -1.0mA, IB = 0
IE = -100µA, IC = 0
VCE = -35V, VEB(OFF) = -0.4V
VCE = -35V, VEB(OFF) = -0.4V
IC = -100µA, VCE = -1.0V
IC = -1.0mA, VCE = -1.0V
IC = -10mA, VCE = -1.0V
IC = -150mA, VCE = -2.0V
IC = -500mA, VCE = -2.0V
IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA
IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA
VCB = -10V, f = 1.0MHz, IE = 0
VEB = -0.5V, f = 1.0MHz, IC = 0
VCE = -10V, IC = -1.0mA, f = 1.0kHz
VCE = -10V, IC = -20mA, f = 100MHz
VCC = -30V, IC = -150mA,
VBE(off) = -2.0V, IB1 = -15mA
VCC = -30V, IC = -150mA,
IB1 = IB2 = -15mA
Note:
6. Measured under pulsed conditions. Pulse width ⤠300µs. Duty cycle ⤠2%
MMDT4413
Document number: DS30121 Rev. 11 - 2
5 of 8
www.diodes.com
August 2013
© Diodes Incorporated
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